1n4148w-v document number 85748 rev. 1.5, 17-aug-10 vishay semiconductors www.vishay.com 1 17431 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diode features ? these diodes are also available in other case styles including the do-35 case with the type designation 1n4148, the minimelf case with the type designation ll4148, and the sot-23 case with the type designation imbd4148-v. ? silicon epitaxial planar diode ? fast switching diodes ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified note: 1) valid provided that electrodes ar e kept at ambient temperature. thermal characteristics t amb = 25 c, unless otherwise specified note: 1) valid provided that electrodes ar e kept at ambient temperature. part ordering code marking remarks 1n4148w-v 1n4148w-v-gs18 or 1N4148W-V-GS08 a2 tape and reel parameter test condition symbol value unit reverse voltage v r 75 v repetitive peak reverse voltage v rrm 100 v average rectified current half wave rectification with resistive load f 50 hz i f(av) 150 1) ma surge forward current t < 1 s and t j = 25 c i fsm 500 ma power dissipation p tot 350 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 357 1) k/w junction temperature t j 150 c storage temperature t stg - 65 to + 150 c
www.vishay.com 2 document number 85748 rev. 1.5, 17-aug-10 1n4148w-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified rectification efficien cy measurement circuit parameter test condition symbol min. ty p. max. unit forward voltage i f = 10 ma v f 1000 mv i f = 100 ma v f 1200 mv leakage current v r = 20 v i r 25 na v r = 75 v i r 5a v r = 100 v i r 100 a v r = 20 v, t j = 150 c i r 50 a diode capacitance v f = v r = 0 v c d 4pf voltage rise when switching on (tested with 50 ma pulses) tested with 50 ma pulses, t p = 0.1 s, rise time < 30 ns, f p = (5 to 100) khz v fr 2.5 v reverse recovery time i f = 10 ma, i r = 1 ma, v r = 6 v, r l = 100 t rr 4ns rectification efficiency f = 100 mhz, v rf = 2 v ? 0.45 17436 60 5 k 2 nf v o v rf = 2 v
1n4148w-v document number 85748 rev. 1.5, 17-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward characteristics figure 2. dynamic forward resistance vs. forward current figure 3. admissible power dissi pation vs. ambient temperature 17437 0 1 2 v f ( v ) i f (ma) 10 -1 10 -2 1 10 10 2 10 3 t j = 100 c t j = 25 c 1743 8 f = 1 khz t j = 25 c i f (ma) r f ( ) 10 10 2 10 3 10 4 10 -2 10 -1 110 2 10 2 5 2 5 2 5 2 5 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 t am b - am b ient temperat u re (c) p tot - po w er dissipation (m w ) 20 8 09 figure 4. relative capacitance vs. reverse voltage figure 5. leakage current vs . junction temperature 17440 v r ( v ) 0.7 0. 8 0.9 1.0 1.1 f = 1 mhz t j = 25 c 2 0 8 6 410 c d ( v r ) c d (0 v ) 17441 t j (c) i r (na) 10 10 2 10 3 10 4 100 200 2 5 2 5 2 5 2 5 v r = 20 v 1 0
www.vishay.com 4 document number 85748 rev. 1.5, 17-aug-10 1n4148w-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches) : sod-123 figure 6. admissible repetitive peak forward current vs. pulse duration 17442 t p (s) i frm (a) 100 1 3 5 10 -5 10 -4 10 -3 10 10 -1 10 -2 25 2 5 25 25 25 25 2 4 10 3 5 2 4 1 3 5 2 4 0.1 i i frm t n = t p /t t = 1/f p t t p n = 0 0.1 0.2 0.5 0.1 (0.004) max. 2. 8 5 (0.112) 2.55 (0.100) 3. 8 5 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.09 8 ) 0. 8 5 (0.033) 0. 8 5 (0.033) 0. 8 5 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.01 8 ) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.00 8 ) 0 to 8 0.45 (0.01 8 ) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s 8 - v -3910.01-001 (4) 17432
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